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Power Mosfet TO-220

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    MPN TK100E10N1,S1X(S
    Mfr. Toshiba
    Oneyac # A-TK100E10N1,S1X(S
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate voltage Vgs 4V
    Transistor Material Si
    Number Of Components Per Chip 1 Ohms
    fet type Enhance
    Minimum Gate Threshold Voltage 2V
    height 15.1mm
    Typical on-delay time 59 ns
    Number Of Pins 3
    length 10.16mm
    Series U-MOSVIII-H
    Forward Diode Voltage 1.2V
    width 4.45mm
    Drain-source voltage Vds 8800 pF @ 50 V
    fet type N-Channel
    Continuous Drain Current Id 207 A
    Gate voltage Vgs -20 V、+20 V
    Power Rating 255 W
    Rds On(Max)@Id,Vgs 3.4 m0hms
    Typical Off-Delay Time 140 ns
    Category Switching Regulator
    Drain-source voltage Vds 100 V
    Package/Enclosure TO-220
    Working temperature +150 °C
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