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Power MOSFET TO-247

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    MPN R6530ENZ4C13
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-R6530ENZ4C13
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-247

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 30A(Tc)
    FET type N-Channel
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 140 milliohms @ 14.5A, 10V
    Vgs (th) (maximum value) for different IDs 4V @ 960uA
    Input capacitance (Ciss) at different Vds (maximum value) 2100 pF @ 25 V
    Gate charge (Qg) at different Vgs (maximum value) 90 nC @ 10 V
    Power dissipation (maximum value) 305W(Tc)
    working temperature 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 650 V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
    Package/Enclosure TO-247
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    Qty. Unit Price Ext. Price
    1+ $9.5232 $9.5232
    30+ $6.0377 $181.131

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