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Power Mosfet 10.16 x 4.45 x 15.1mm

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    MPN TK56E12N1,S1X(S
    Mfr. Toshiba
    Oneyac # A-TK56E12N1,S1X(S
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 10.16 x 4.45 x 15.1mm

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Working temperature +150 °C
    Series U-MOSVIII-H
    Transistor Material Si
    Continuous Drain Current Id 112 A
    Drain-source voltage Vds 120 V
    Rds On(Max)@Id,Vgs 7 m0hms
    Typical Off-Delay Time 73 ns
    length 10.16mm
    Gate voltage Vgs 4V
    Typical on-delay time 45 ns
    Minimum Gate Threshold Voltage 2V
    width 4.45mm
    fet type Enhance
    fet type N-Channel
    Drain-source voltage Vds 4200 pF @ 60 V
    Category Switching Regulator
    Number Of Pins 3
    Forward Diode Voltage 1.2V
    Package/Enclosure 10.16 x 4.45 x 15.1mm
    Power Rating 168 W
    height 15.1mm
    Gate voltage Vgs -20 V、+20 V
    Number Of Components Per Chip 1 Ohms
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    In Stock :  0 Lead Time:24W

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    When unpacking without original label and tray!
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