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Power MOSFET 10.16*4.45*15.1mm

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    MPN TK56E12N1,S1X(S
    Mfr. Toshiba
    Oneyac # A-TK56E12N1,S1X(S
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 10.16*4.45*15.1mm

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Continuous drain current Id 112 A
    Drain source voltage Vds 120 V
    Rds On(Max)@Id,Vgs 7 m0hms
    Gate voltage Vgs 4V
    Minimum gate threshold voltage 2V
    Gate voltage Vgs -20 V、+20 V
    pin number 3
    FET type enhance
    category Switch regulator
    Power Rating 168 W
    Typical connection delay time 45 ns
    Typical shutdown delay time 73 ns
    Drain source voltage Vds 4200 pF @ 60 V
    Transistor material Si
    Series U-MOSVIII-H
    Number of components per chip 1 Ohms
    width 4.45mm
    length 10.16mm
    height 15.1mm
    Forward diode voltage 1.2V
    Package/Enclosure 10.16*4.45*15.1mm
    Maximum operating temperature +150 °C
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