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Power MOSFET 19A(Tc) ±30V 239W(Tc) 265m Ohms@9.5A,10V -55°C~150°C(TJ) TO-3P-3,SC-65-3 TO-3PN N-Channel 500V 19A 265 milliohms @ 9.5A, 10V -55°C ~ 150°C(TJ)

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MPN FDA18N50
Mfr. ON Semiconductor
Oneyac # A3-FDA18N50
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 500 V 265 mOhm Flange Mount UniFET Mosfet - TO-3PN

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Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Series UniFET™
Continuous drain current Id 19A(Tc)
Drive voltage @ Rds On (Max), Rds On (Min) 10V
Vgs (th) at different IDs (maximum value) 5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 60nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 2860pF @ 25V
Gate voltage Vgs ±30V
Pd power dissipation (Max) 239W(Tc)
Rds On(Max)@Id,Vgs 265m Ohms@9.5A,10V
working temperature -55°C~150°C(TJ)
Package/Enclosure TO-3P-3,SC-65-3
Package/Enclosure TO-3PN
FET type N-Channel
Drain source voltage Vds 500V
Continuous drain current Id 19A
Vgs (th) at different IDs (maximum value) 5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 60nC
Input capacitance (Ciss) at different Vds (maximum value) 2860pF
Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
Power Rating 239W(Tc)
Rds On(Max)@Id,Vgs 265 milliohms @ 9.5A, 10V
working temperature -55°C ~ 150°C(TJ)
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