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General Purpose Transistors TO-220-3 TO-220

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    MPN FJP5027RTU
    Mfr. ON Semiconductor
    Oneyac # A3-FJP5027RTU
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3 Package/Enclosure : TO-220

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    Specifications FAQ

    Description Details Operation
    Product Category General Purpose Transistors
    Vce saturation value (maximum value) at different Ib and Ic values 2V @ 300mA,1.5A
    Current collector cutoff (maximum value) 10µA(ICBO)
    DC current gain (hFE) at different Ic and Vce (minimum value) 15 @ 200mA,5V
    Power Rating 50W
    Frequency - Transition 15MHz
    working temperature 150°C(TJ)
    Package/Enclosure TO-220-3
    Package/Enclosure TO-220
    Type of transistor NPN
    Maximum allowable collector current Ic 3A
    Collector emitter breakdown voltage VCEO 800V
    Power dissipation Pd 50W
    Maximum collector emitter voltage VCEO 800V
    Collector continuous current 3A
    Collector emitter saturation voltage 2V
    DC current gain hFE 15
    Characteristic frequency fT 15MHz
    VEBO 7V
    VCBO 1100V
    working temperature -55℃~150℃
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