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Power MOSFET TO-3P-3,SC-65-3 TO-3PN

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    MPN FDA18N50
    Mfr. ON Semiconductor
    Oneyac # A-FDA18N50
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-3P-3,SC-65-3 Package/Enclosure : TO-3PN

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    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series UniFET™
    Continuous drain current Id 19A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 60nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2860pF @ 25V
    Gate voltage Vgs ±30V
    Pd power dissipation (Max) 239W(Tc)
    Rds On(Max)@Id,Vgs 265m Ohms@9.5A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-3P-3,SC-65-3
    Package/Enclosure TO-3PN
    FET type N-Channel
    Drain source voltage Vds 500V
    Continuous drain current Id 19A
    Vgs (th) at different IDs (maximum value) 5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 60nC
    Input capacitance (Ciss) at different Vds (maximum value) 2860pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
    Power Rating 239W(Tc)
    Rds On(Max)@Id,Vgs 265 milliohms @ 9.5A, 10V
    working temperature -55°C ~ 150°C(TJ)
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