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Power MOSFET BSZ0901NSATMA1

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    MPN BSZ0901NS
    Other # BSZ0901NSATMA1
    Mfr. Infineon
    Oneyac # A3-BSZ0901NS
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 2850pF @ 15V
    working temperature -55°C~150°C(TJ)
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 45nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 40A
    Rds On(Max)@Id,Vgs 1.7mΩ
    Gate voltage Vgs 20V
    QG gate charge 23nC
    to configure SingleQuadDrainTripleSource
    Pd power dissipation (Max) 2.1W
    height 1mm
    length 3.3mm
    FET type N-Channel
    Forward transconductance - minimum value 140S
    Descent time 4.8ns
    rise time 6.8ns
    Typical shutdown delay time 28ns
    Typical connection delay time 5.4ns
    Drain source voltage Vds 30V
    width 3.3mm
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