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Small signal MOSFET DFN

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    MPN DMG3415UFY4-7
    Mfr. Diodes Incorporated
    Oneyac # A3-DMG3415UFY4-7
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single P-Channel 16 V 1.35 W 10 nC Silicon Surface Mount Mosfet - XFDFN-3

    Specifications FAQ

    Description Details Operation
    Product Category Small signal MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 1.8V,4.5V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 10nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 281.9pF @ 10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure DFN
    Number of channels 1Channel
    Drain source voltage Vds 16V
    Continuous drain current Id 2.5A
    Rds On(Max)@Id,Vgs 31mΩ
    Gate voltage Vgs 8V
    QG gate charge 10nC
    to configure Single
    Pd power dissipation (Max) 650mW
    Series DMG3415
    FET type P-Channel
    Descent time 568ns
    rise time 175ns
    Typical shutdown delay time 885ns
    Typical connection delay time 79ns
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