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Power Mosfet SOIC-8

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    MPN SIR158DP-T1-GE3
    Mfr. Vishay
    Oneyac # A-SIR158DP-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Pd-power dissipation (Max) 5.4W(Ta),83W(Tc)
    width 5.15mm
    Package/Enclosure SOIC-8
    Vgs (th) (maximum) at different Ids 2.5V @ 250µA
    Drive voltage @Rds On (Max), Rds On (Min) 4.5V,10V
    Gate voltage Vgs ±20V
    length 6.15mm
    Operating temperature -55°C~150°C(TJ)
    Gate Charge (Qg) at Different Vgs (Maximum) 130nC @ 10V
    Series SIR
    Rds On(Max)@Id,Vgs 1.8MΩ
    Continuous Drain Current Id 40A
    Input capacitance (Ciss) at different Vds (maximum) 4980pF @ 15V
    Drain-source voltage Vds 30V
    fet type N-Channel
    height 1.04mm
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