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Power MOSFET PowerPak-4

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    MPN SIHH21N60E-T1-GE3
    Mfr. Vishay
    Oneyac # A-SIHH21N60E-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PowerPak-4 Series : E

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 83nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2015pF @ 100V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure PowerPak-4
    Continuous drain current Id 20A
    Pd power dissipation (Max) 104W
    QG gate charge 55nC
    Rds On(Max)@Id,Vgs 153mΩ
    Drain source voltage Vds 600V
    Gate voltage Vgs 4V
    rise time 32ns
    Descent time 45ns
    Typical shutdown delay time 68ns
    Typical connection delay time 20ns
    width 8mm
    Series E
    Number of channels 1Channel
    to configure Single
    length 8mm
    height 1mm
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    When unpacking without original label and tray!
    MPQ 3,000 ETD HK Contact Us
    Min. 1 Mult. 1