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Power MOSFET 8-PowerTDFN

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    MPN SQJQ100EL-T1_GE3
    Mfr. Vishay
    Oneyac # A-SQJQ100EL-T1_GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 220nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 14500pF @ 25V
    working temperature -55°C~175°C(TJ)
    Package/Enclosure 8-PowerTDFN
    Continuous drain current Id 160A
    Pd power dissipation (Max) 136W
    QG gate charge 220nC
    Rds On(Max)@Id,Vgs 900uΩ
    Drain source voltage Vds 40V
    Gate voltage Vgs 1.5V
    rise time 60ns
    Descent time 30ns
    Typical shutdown delay time 60ns
    Typical connection delay time 24ns
    width 6.22mm
    Forward transconductance - minimum value 122S
    Series SQ
    Number of channels 1Channel
    to configure Single
    length 7.9mm
    height 1.9mm
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    When unpacking without original label and tray!
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