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Power MOSFET SO-8 -30V

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    MPN SI4491EDY-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI4491EDY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type P-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 17.3A(Ta)
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.8V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 153nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Gate voltage Vgs ±25V
    Input capacitance (Ciss) at different Vds (maximum value) 4620pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 15V
    Rds On(Max)@Id,Vgs 6.5mΩ@13A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SO-8
    Pd power dissipation (Max) 6.9W
    Voltage Rating -30V
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