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Power MOSFET TO-251-3

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    MPN SIHU6N65E-GE3
    Mfr. Vishay
    Oneyac # A-SIHU6N65E-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-251-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 48nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 820pF @ 100V
    Gate voltage Vgs ±30V
    Pd power dissipation (Max) 78W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-251-3
    FET type N-Channel
    Continuous drain current Id 7A
    Rds On(Max)@Id,Vgs 600mΩ
    Drain source voltage Vds 4V
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