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Gate Drive SOIC 8N

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    MPN IRS2001SPBF
    Mfr. Infineon
    Oneyac # A-IRS2001SPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    IRS2001 Series 200 V 290 mA 20 V Supply Dual High And Low Side Driver - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Gate Drive
    Gate type igbt, n-channel mosfet
    Operating temperature -40°C ~ 150°C(TJ)
    Current-peak output (sink, pull out) 290mA,600mA
    High-Side Voltage-Maximum (Bootstrap) 200V
    Input type Non-inverting
    Logic Voltage-VIL, VIH 0.8V,2.5V
    Drive configuration Half bridge
    Voltage-power 10 V ~ 20 V
    Current-peak output (sink, pull out) 290mA,600mA
    Voltage-Power 10 V ~ 20 V
    Number of drives 2
    Rise / fall time (typical) 70ns,35ns
    Package/Enclosure SOIC 8N
    fet type Detached
    High-SideVoltage-Max(Bootstrap) 200V
    Logic voltage-VIL, VIH 0.8V,2.5V
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