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IGBT Transistor 15.7 x 5.1 x 20.7mm

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    MPN IRG4PH40UD2-EP
    Mfr. Infineon
    Oneyac # A-IRG4PH40UD2-EP
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 15.7 x 5.1 x 20.7mm Power Rating : 160W

    Specifications FAQ

    Description Details Operation
    Product Category IGBT Transistor
    Maximum continuous collector current 41 A
    width 5.1mm
    Switching speed 1MHz
    Number Of Pins 3
    Pulse Current-Collector (Icm) 82A
    Vce (on) at different Vge, Ic 3.1V @ 15V,21A
    length 15.7mm
    Test Conditions 800V, 21A, 10 ohm, 15V
    Current-Collector (Ic) (Max) 41A
    Gate capacitance 2100pF
    Td (on / off) value at 25 ℃ 22ns/100ns
    Maximum collector-emitter voltage 1200 V
    Power Rating 160W
    Transistor Configuration Single
    Voltage-Collector-emitter breakdown (maximum) 1200V
    Reverse Recovery Time (trr) 50ns
    Package/Enclosure 15.7 x 5.1 x 20.7mm
    fet type N-Channel
    Input type standard
    height 20.7mm
    Rated energy 4490µJ
    Gate voltage Vgs ±20V
    Operating temperature -55°C ~ 150°C(TJ)
    Switching energy 1.95mJ (on), 1.71mJ (off)
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