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IGBT transistor 10.67*9.65*4.83mm

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    MPN IRG4BC30W-SPBF
    Mfr. Infineon
    Oneyac # A-IRG4BC30W-SPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 10.67*9.65*4.83mm

    Specifications FAQ

    Description Details Operation
    Product Category IGBT transistor
    Voltage emitter breakdown (maximum value) 600V
    Current collector (Ic) (maximum value) 23A
    Pulse current collector (Icm) 92A
    Vce (on) at different Vge and Ic 2.7V @ 15V,12A
    Switching energy 130 µ J (on), 130 µ J (off)
    Input type standard
    Td (on/off) value at 25 ° C 25ns/99ns
    Test conditions 480V, 12A, 23 ohms, 15V
    working temperature -55°C ~ 150°C(TJ)
    Maximum continuous collector current 23 A
    Maximum collector emitter voltage 600 V
    Gate voltage Vgs ±20V
    Power Rating 100W
    FET type N-Channel
    pin number 3
    Switching speed 30 → 150kHz
    Transistor configuration single
    length 10.67mm
    width 9.65mm
    height 4.83mm
    Package/Enclosure 10.67*9.65*4.83mm
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