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Power MOSFET D-Pak

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    MPN IRFR9N20DTRPBF
    Mfr. Infineon
    Oneyac # A-IRFR9N20DTRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 200 V 86 W 18 nC Hexfet Power Mosfet Surface Mount - TO-252AA

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 5.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 27nC @ 10V
    Gate voltage Vgs ±30V
    Input capacitance (Ciss) at different Vds (maximum value) 560pF @ 25V
    Pd power dissipation (Max) 86W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 5.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 27nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 560pF @ 25V
    Rds On(Max)@Id,Vgs 380mΩ@5.6A,10V
    FET type N-Channel
    Drain source voltage Vds 200V
    Continuous drain current Id 9.4A
    Package/Enclosure D-Pak
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
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    In Stock :  0 Lead Time:14W

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    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 2,000 ETD HK Contact Us
    Min. 1 Mult. 1