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Power Mosfet 

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    MPN IRFI4510GPBF
    Mfr. Infineon
    Oneyac # A-IRFI4510GPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Forward transconductance 55S
    Vgs (th) (maximum) at different Ids 4V @ 100µA
    Series HEXFET
    Forward Diode Voltage 1.3V
    Gate Charge (Qg) at Different Vgs (Maximum) 81nC @ 10V
    height 9.8mm
    Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum) 2998pF @ 50V
    length 10.63mm
    Number Of Components Per Chip 1 Ohms
    Rds On(Max)@Id,Vgs 13.5mΩ
    Continuous Drain Current Id 35A
    Pd-power dissipation (Max) 42W
    Transistor Material Si
    Transistor Configuration Single
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    width 4.83mm
    Number Of Pins 3
    Operating temperature -55°C~175°C(TJ)
    Typical on-delay time 16 ns
    Typical Off-Delay Time 54 ns
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    Min. 1 Mult. 1