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Power MOSFET 

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    MPN IRF7769L2TRPBF
    Mfr. Infineon
    Oneyac # A-IRF7769L2TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drain source voltage Vds 100V
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 300nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 11560pF @ 25V
    working temperature -55°C~175°C(TJ)
    Number of channels 1Channel
    Continuous drain current Id 124A
    Rds On(Max)@Id,Vgs 2.8mΩ
    Gate voltage Vgs 20V
    QG gate charge 200nC
    to configure SingleHexDrainOctalSource
    Pd power dissipation (Max) 125W
    height 0.74mm
    length 9.15mm
    FET type N-Channel
    width 7.1mm
    Descent time 41ns
    rise time 32ns
    Typical shutdown delay time 92ns
    Typical connection delay time 44ns
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