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Gate Drive SOIC 8N

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    MPN IR7106STRPBF
    Mfr. Infineon
    Oneyac # A-IR7106STRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC 8N

    Specifications FAQ

    Description Details Operation
    Product Category Gate Drive
    Package/Enclosure SOIC 8N
    Drive configuration Half bridge
    Gate type igbt, n-channel mosfet
    fet type Detached
    Current-peak output (sink, pull out) 200mA,350mA
    Operating temperature -40°C ~ 150°C(TJ)
    Voltage-Power 10 V ~ 20 V
    Number of drives 2
    Rise / fall time (typical) 150ns,50ns
    Logic Voltage-VIL, VIH 0.8V,2.9V
    Input type Non-inverting
    High-SideVoltage-Max(Bootstrap) 700V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

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