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Power Mosfet IPB042N10N3GE8187ATMA1

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    MPN IPB042N10N3 G E8187
    Other # IPB042N10N3GE8187ATMA1
    Mfr. Infineon
    Oneyac # A-IPB042N10N3 G E8187
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

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    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Series OptiMOS3
    Number of channels 1Channel
    height 4.4mm
    Continuous Drain Current Id 100A
    Qg-gate charge 117nC
    Rise Time 59ns
    Pd-power dissipation (Max) 214W
    Configuration Single
    fet type N-Channel
    Rds On(Max)@Id,Vgs 3.6mΩ
    Operating temperature -55°C~175°C
    Forward Transconductance-Minimum 73S
    width 9.25mm
    Fall time 14ns
    length 10mm
    Typical on-delay time 27ns
    Drain-source voltage Vds 100V
    Typical off delay time 48ns
    Gate voltage Vgs 20V
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