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Power MOSFET BSP149H6327XTSA1 SOT-223

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    MPN BSP149 H6327
    Other # BSP149H6327XTSA1
    Mfr. Infineon
    Oneyac # A-BSP149 H6327
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-223

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 200V
    Continuous drain current Id 660mA
    Rds On(Max)@Id,Vgs 1.8Ω@660mA,10V
    Gate voltage Vgs ±20V
    QG gate charge 14nC
    to configure Single
    Pd power dissipation (Max) 1.8W
    height 1.6mm
    length 6.5mm
    Series BSP149
    FET type N-Channel
    width 3.5mm
    Forward transconductance - minimum value 400mS
    Descent time 21ns
    rise time 3.4ns
    Typical shutdown delay time 45ns
    Typical connection delay time 5.1ns
    working temperature -55°C~150°C
    Package/Enclosure SOT-223
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    In Stock :  1,000 Lead Time:24W

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    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1