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Power MOSFET 

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    MPN AUIRFS3107-7P
    Mfr. Infineon
    Oneyac # A-AUIRFS3107-7P
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 240nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 9200pF @ 50V
    working temperature -55°C~175°C(TJ)
    Minimum gate threshold voltage 2V
    pin number 7
    Transistor configuration single
    category Power MOSFET
    Number of components per chip 1 Ohms
    Series HEXFET
    Transistor material Si
    Typical shutdown delay time 100 ns
    Number of channels 1Channel
    Continuous drain current Id 260A
    Rds On(Max)@Id,Vgs 2.5mΩ
    Gate voltage Vgs 20V
    QG gate charge 160nC
    to configure SingleQuintSource
    Pd power dissipation (Max) 370W
    height 4.4mm
    length 10mm
    FET type N-Channel
    width 9.25mm
    Forward transconductance - minimum value 260S
    Descent time 64ns
    rise time 80ns
    Typical shutdown delay time 100ns
    Typical connection delay time 17ns
    Drain source voltage Vds 75V
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