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Power MOSFET 

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    MPN AUIRF3808S
    Mfr. Infineon
    Oneyac # A-AUIRF3808S
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 220nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5310pF @ 25V
    working temperature -55°C~175°C(TJ)
    Continuous drain current Id 106A
    Rds On(Max)@Id,Vgs 7mΩ
    Minimum gate threshold voltage 2V
    pin number 3
    Transistor configuration single
    category Power MOSFET
    Pd power dissipation (Max) 200W
    Number of components per chip 1 Ohms
    length 10.67mm
    height 4.83mm
    Series HEXFET
    width 9.65mm
    Transistor material Si
    Typical shutdown delay time 68 ns
    Typical connection delay time 16 ns
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