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Power MOSFET 

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    MPN AUIRF1018E
    Mfr. Infineon
    Oneyac # A-AUIRF1018E
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : HEXFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 100µA
    Gate charge (Qg) at different Vgs (maximum value) 69nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2290pF @ 50V
    working temperature -55°C~175°C(TJ)
    Continuous drain current Id 79A
    Rds On(Max)@Id,Vgs 8.4mΩ
    Minimum gate threshold voltage 2V
    Transistor configuration single
    pin number 3
    category Power MOSFET
    Pd power dissipation (Max) 110W
    length 10.67mm
    Number of components per chip 1 Ohms
    Series HEXFET
    Transistor material Si
    Typical shutdown delay time 55 ns
    Typical connection delay time 13 ns
    width 4.83mm
    height 9.02mm
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