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Power MOSFET SPU04N60C3BKMA1 PG-TO251-3

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    MPN SPU04N60C3
    Other # SPU04N60C3BKMA1
    Mfr. Infineon
    Oneyac # A-SPU04N60C3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PG-TO251-3

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 490pF @ 25V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 50W(Tc)
    Rds On(Max)@Id,Vgs 950mΩ@2.8A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure PG-TO251-3
    FET type N-Channel
    Drain source voltage Vds 650V
    Continuous drain current Id 4.5A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 3.9V @ 200µA
    Gate charge (Qg) at different Vgs (maximum value) 25nC @ 10V
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