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Power MOSFET SPI07N60C3HKSA1 I2PAK (TO-262)

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    MPN SPI07N60C3
    Other # SPI07N60C3HKSA1
    Mfr. Infineon
    Oneyac # A-SPI07N60C3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : I2PAK (TO-262) Series : CoolMOSC3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    QG gate charge 21nC
    to configure Single
    Pd power dissipation (Max) 83W
    height 9.45mm
    length 10.2mm
    Series CoolMOSC3
    width 4.5mm
    Descent time 7ns
    rise time 3.5ns
    Typical shutdown delay time 60ns
    Typical connection delay time 6ns
    Rds On(Max)@Id,Vgs 600mΩ
    Drain source voltage Vds 600V
    Continuous drain current Id 7.3A
    RthJC max 1.5 K/W
    QG (typ @10V) 21.0 nC
    Package/Enclosure I2PAK (TO-262)
    Budgetary Price €/1k 0.76
    Ptot max 83.0W
    FET type N-Channel
    Gate voltage Vgs 2.1V,3.9V
    Mounting THT
    working temperature -55°C~150°C
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