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Power MOSFET SPB80P06PGATMA1

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    MPN SPB80P06P G
    Other # SPB80P06PGATMA1
    Mfr. Infineon
    Oneyac # A-SPB80P06P G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 5033pF @ 25V
    working temperature -55°C~175°C(TJ)
    Drain source voltage Vds 60V
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 5.5mA
    Gate charge (Qg) at different Vgs (maximum value) 173nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 80A
    Rds On(Max)@Id,Vgs 23mΩ
    Gate voltage Vgs -10V
    QG gate charge 115nC
    to configure Single
    Pd power dissipation (Max) 340W
    height 4.4mm
    length 10mm
    Series SPB80P06
    FET type P-Channel
    width 9.25mm
    Forward transconductance - minimum value 18S
    Descent time 30ns
    rise time 18ns
    Typical shutdown delay time 56ns
    Typical connection delay time 24ns
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    In Stock :  1,000 Lead Time:24W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1