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Power MOSFET SPA17N80C3XKSA1

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    MPN SPA17N80C3
    Other # SPA17N80C3XKSA1
    Mfr. Infineon
    Oneyac # A-SPA17N80C3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

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    Datasheet

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 2320pF @ 25V
    working temperature -55°C~150°C(TJ)
    Drain source voltage Vds 800V
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 3.9V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 177nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 17A
    Rds On(Max)@Id,Vgs 290mΩ
    Gate voltage Vgs 2.1V
    QG gate charge 177nC
    to configure Single
    Pd power dissipation (Max) 42W
    height 16.15mm
    length 10.65mm
    Series CoolMOSC3
    FET type N-Channel
    width 4.85mm
    Forward transconductance - minimum value 15S
    Descent time 6ns
    rise time 15ns
    Typical shutdown delay time 72ns
    Typical connection delay time 25ns
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