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Power MOSFET SO8

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    MPN IRF7809AV
    Mfr. Infineon
    Oneyac # A-IRF7809AV
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SO8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 13.3A(Ta)
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 62nC @ 5V
    Gate voltage Vgs ±12V
    Input capacitance (Ciss) at different Vds (maximum value) 3780pF @ 16V
    Pd power dissipation (Max) 2.5W(Ta)
    Rds On(Max)@Id,Vgs 9mΩ@15A,4.5V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SO8
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