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Power MOSFET IPW90R500C3XKSA1

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    MPN IPW90R500C3
    Other # IPW90R500C3XKSA1
    Mfr. Infineon
    Oneyac # A-IPW90R500C3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 1700pF @ 100V
    working temperature -55°C~150°C(TJ)
    Drain source voltage Vds 900V
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 3.5V @ 740µA
    Gate charge (Qg) at different Vgs (maximum value) 68nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 11A
    Rds On(Max)@Id,Vgs 500mΩ
    Gate voltage Vgs 20V
    to configure Single
    Pd power dissipation (Max) 156W
    height 21.1mm
    length 16.13mm
    Series CoolMOSC3
    FET type N-Channel
    width 5.21mm
    Descent time 25ns
    rise time 20ns
    Typical shutdown delay time 400ns
    Typical connection delay time 70ns
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    In Stock :  240 Lead Time:22W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 240 ETD HK 5~7 Working Days
    Min. 1 Mult. 1