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Power MOSFET IPP320N20N3GXKSA1

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    MPN IPP320N20N3 G
    Other # IPP320N20N3GXKSA1
    Mfr. Infineon
    Oneyac # A-IPP320N20N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : OptiMOS™

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 200V
    Continuous drain current Id 34A
    Rds On(Max)@Id,Vgs 28mΩ
    Gate voltage Vgs 20V
    QG gate charge 29nC
    to configure Single
    Pd power dissipation (Max) 136W
    height 15.65mm
    length 10mm
    width 4.4mm
    Forward transconductance - minimum value 27S
    Descent time 4ns
    rise time 9ns
    Typical shutdown delay time 21ns
    Typical connection delay time 11ns
    working temperature -55°C~175°C
    Series OptiMOS™
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    In Stock :  500 Lead Time:22W

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    MPQ 500 ETD HK 5~7 Working Days
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