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Power MOSFET IPP110N20NAAKSA1

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    MPN IPP110N20NA
    Other # IPP110N20NAAKSA1
    Mfr. Infineon
    Oneyac # A-IPP110N20NA
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 7100pF @ 100V
    working temperature -55°C~175°C(TJ)
    Drain source voltage Vds 200V
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 270µA
    Gate charge (Qg) at different Vgs (maximum value) 87nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 88A
    Rds On(Max)@Id,Vgs 9.9mΩ
    Gate voltage Vgs 20V
    QG gate charge 87nC
    to configure Single
    Pd power dissipation (Max) 300W
    height 15.65mm
    length 10mm
    Series OptiMOS3
    FET type N-Channel
    width 4.4mm
    Descent time 11ns
    rise time 26ns
    Typical shutdown delay time 41ns
    Typical connection delay time 18ns
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    In Stock :  500 Lead Time:22W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 500 ETD HK 5~7 Working Days
    Min. 1 Mult. 1