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Power MOSFET IPD65R950CFDATMA1

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    MPN IPD65R950CFD
    Other # IPD65R950CFDATMA1
    Mfr. Infineon
    Oneyac # A-IPD65R950CFD
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 650V
    Continuous drain current Id 3.9A
    Rds On(Max)@Id,Vgs 855mΩ
    Gate voltage Vgs 20V
    QG gate charge 14.1nC
    to configure Single
    Pd power dissipation (Max) 36.7W
    height 2.3mm
    length 6.5mm
    Series XPD65R950
    FET type N-Channel
    width 6.22mm
    Descent time 13.8ns
    rise time 6.5ns
    Typical shutdown delay time 43ns
    Typical connection delay time 9ns
    working temperature -55°C~150°C
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