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Power MOSFET IPD50R280CEATMA1 TO-252-3

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    MPN IPD50R280CE
    Other # IPD50R280CEATMA1
    Mfr. Infineon
    Oneyac # A-IPD50R280CE
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 500V
    Continuous drain current Id 18.1A
    Rds On(Max)@Id,Vgs 280mΩ@4.2A,13V
    Gate voltage Vgs ±20V
    QG gate charge 32.6nC
    to configure Single
    Pd power dissipation (Max) 119W
    height 2.3mm
    length 6.5mm
    Series XPD50R280
    FET type N-Channel
    width 6.22mm
    Descent time 7.6ns
    rise time 6.4ns
    Typical shutdown delay time 40ns
    Typical connection delay time 8ns
    working temperature -55°C~150°C
    Package/Enclosure TO-252-3
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