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Universal MOSFET IPC302N15N3X1SA1 WAFER SAWN

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    MPN IPC302N15N3
    Other # IPC302N15N3X1SA1
    Mfr. Infineon
    Oneyac # A-IPC302N15N3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : WAFER SAWN

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    Number of channels 1Channel
    Continuous drain current Id 1mA
    to configure Single
    Series IPC302N15
    FET type N-Channel
    Package/Enclosure WAFER SAWN
    Technology OptiMOS™ 3
    Budgetary Price €/1k 1.89
    Mode Enhancement
    Gate voltage Vgs 2V,4V
    Drain source voltage Vds 150V
    Rds On(Max)@Id,Vgs 4.9mΩ
    Die Size (-) min max 4.5mm² 6.7mm²
    Die Size (Y) 6.7 mm
    Die Size (X) 4.5 mm
    Thickness 250
    Die Size (Area) 30.15 mm²
    EAS/Avalanche Energy 45.0mJ
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