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Power Mosfet IPB200N25N3GATMA1 TO-263-3

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    MPN IPB200N25N3 G
    Other # IPB200N25N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPB200N25N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3 Operating temperature : -55°C~175°C

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    width 9.25mm
    Fall time 12ns
    length 10mm
    Gate voltage Vgs ±20V
    Continuous Drain Current Id 64A
    Drain-source voltage Vds 250V
    Rise Time 20ns
    Series OptiMOS™
    Operating temperature -55°C~175°C
    Typical on-delay time 18ns
    Number of channels 1Channel
    Pd-power dissipation (Max) 300W
    Rds On(Max)@Id,Vgs 20mΩ@64A,10V
    Typical off delay time 45ns
    Configuration Single
    Package/Enclosure TO-263-3
    Qg-gate charge 86nC
    Forward Transconductance-Minimum 61S
    height 4.4mm
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    In Stock :  1,000 Lead Time:23W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1