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Power Mosfet IPB083N10N3GATMA1 TO-263-3

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    MPN IPB083N10N3 G
    Other # IPB083N10N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPB083N10N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3 Operating temperature : -55°C~175°C

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate voltage Vgs ±20V
    Configuration Single
    length 10mm
    Fall time 8ns
    width 9.25mm
    Operating temperature -55°C~175°C
    Rds On(Max)@Id,Vgs 8.3mΩ@73A,10V
    Rise Time 42ns
    Drain-source voltage Vds 100V
    Forward Transconductance-Minimum 45S
    Number of channels 1Channel
    Pd-power dissipation (Max) 125W
    Continuous Drain Current Id 80A
    height 4.4mm
    Qg-gate charge 55nC
    Package/Enclosure TO-263-3
    Series OptiMOS3
    fet type N-Channel
    Typical on-delay time 18ns
    Typical off delay time 31ns
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