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Power MOSFET IPA60R190C6XKSA1

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    MPN IPA60R190C6
    Other # IPA60R190C6XKSA1
    Mfr. Infineon
    Oneyac # A-IPA60R190C6
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

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    Datasheet

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 1400pF @ 100V
    working temperature -55°C~150°C(TJ)
    Drain source voltage Vds 600V
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 3.5V @ 630µA
    Gate charge (Qg) at different Vgs (maximum value) 63nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 20.2A
    Rds On(Max)@Id,Vgs 170mΩ
    Gate voltage Vgs 20V
    QG gate charge 63nC
    to configure Single
    Pd power dissipation (Max) 34W
    height 16.15mm
    length 10.65mm
    Series CoolMOSC6
    FET type N-Channel
    width 4.85mm
    Descent time 9ns
    rise time 11ns
    Typical shutdown delay time 110ns
    Typical connection delay time 15ns
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