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Power MOSFET IPA50R800CEXKSA2

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    MPN IPA50R800CE
    Other # IPA50R800CEXKSA2
    Mfr. Infineon
    Oneyac # A-IPA50R800CE
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drain source voltage Vds 500V
    Drive voltage @ Rds On (Max), Rds On (Min) 13V
    Vgs (th) at different IDs (maximum value) 3.5V @ 130µA
    Gate charge (Qg) at different Vgs (maximum value) 12.4nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 280pF @ 100V
    working temperature -40°C~150°C(TJ)
    Number of channels 1Channel
    Continuous drain current Id 7.6A
    Rds On(Max)@Id,Vgs 720mΩ
    Gate voltage Vgs 20V
    QG gate charge 12.4nC
    to configure Single
    Pd power dissipation (Max) 26.4W
    height 16.15mm
    length 10.65mm
    Series CoolMOSCE
    FET type N-Channel
    width 4.85mm
    Descent time 15.9ns
    rise time 5.5ns
    Typical shutdown delay time 26ns
    Typical connection delay time 6.2ns
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