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IGBT transistor 170W Tube -40°C ~ 175°C

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MPN IKW20N60H3
Other # IKW20N60H3FKSA1
Mfr. Infineon
Oneyac # A-IKW20N60H3
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description 170W Tube -40°C ~ 175°C

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category IGBT transistor
Series IKW20N60
Standard packaging quantity 240
Maximum collector emitter voltage VCEO 600 V
collector-emitter saturation voltage 1.95 V
Maximum voltage of gate transmitter 20 V
Continuous collector current at 25 ° C 20 A
Gate emitter leakage current 100 nA
Power dissipation 170 W
to configure Single
Collector emitter maximum voltage VCEO 600V
Collector emitter saturation voltage 1.95V
Maximum voltage of gate/emitter ±20V
Continuous collector current at 25 ° C 40A
Power Rating 170W
Package/Enclosure Tube
Gate emitter leakage current 100nA
working temperature -40°C ~ 175°C
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MPQ 240 ETD HK Contact Us
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