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IGBT transistor WAFER SAWN

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    MPN IGC142T120T8RH
    Mfr. Infineon
    Oneyac # A-IGC142T120T8RH
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : WAFER SAWN

    Specifications FAQ

    Description Details Operation
    Product Category IGBT transistor
    RoHS compliant yes
    Package/Enclosure WAFER SAWN
    Technology IGBT4 High Power
    VCE max 1200.0 V
    Drain source voltage Vds 1200V
    working temperature -40.0°C 175.0°C
    VGE(th) min max 5.1 V 6.4 V
    VCE(sat) max 1.26 V
    VCE max 1200.0V
    VCE(sat) max 1.26V
    IC max 150.0A
    VGE(th) min max 5.1V 6.4V
    IC max 150.0 A
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