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Power MOSFET BSZ097N04LSGATMA1

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    MPN BSZ097N04LS G
    Other # BSZ097N04LSGATMA1
    Mfr. Infineon
    Oneyac # A-BSZ097N04LS G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 1900pF @ 20V
    working temperature -55°C~150°C(TJ)
    Drain source voltage Vds 40V
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2V @ 14µA
    Gate charge (Qg) at different Vgs (maximum value) 24nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 40A
    Rds On(Max)@Id,Vgs 14.2mΩ
    Gate voltage Vgs 10V
    QG gate charge 18nC
    to configure Single
    Pd power dissipation (Max) 35W
    height 1.10mm
    length 3.3mm
    Series OptiMOS3
    FET type N-Channel
    Forward transconductance - minimum value 24S
    Descent time 2.8ns
    rise time 2.4ns
    Typical shutdown delay time 16ns
    Typical connection delay time 3.5ns
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