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Power MOSFET BSO080P03NS3EGXUMA1

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    MPN BSO080P03NS3E G
    Other # BSO080P03NS3EGXUMA1
    Mfr. Infineon
    Oneyac # A-BSO080P03NS3E G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : OptiMOS3P3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 14.8A
    Rds On(Max)@Id,Vgs 8mΩ
    Gate voltage Vgs 25V
    QG gate charge -61nC
    to configure Single
    Pd power dissipation (Max) 2.5W
    height 1.75mm
    length 4.9mm
    Series OptiMOS3P3
    FET type P-Channel
    width 3.9mm
    Forward transconductance - minimum value 44S
    Descent time 19ns
    rise time 47ns
    Typical shutdown delay time 64ns
    Typical connection delay time 16ns
    working temperature -55°C~150°C
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    MPQ 2,500 ETD HK Contact Us
    Min. 1 Mult. 1