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Power MOSFET BSG0811NDATMA1

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    MPN BSG0811ND
    Other # BSG0811NDATMA1
    Mfr. Infineon
    Oneyac # A-BSG0811ND
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 2Channel
    Drain source voltage Vds 25V
    Continuous drain current Id 50A
    Rds On(Max)@Id,Vgs 2.4mΩ,700uΩ
    Gate voltage Vgs 16V
    QG gate charge 8.4nC,29nC
    to configure Dual
    Pd power dissipation (Max) 6.25W
    height 1.15mm
    length 6mm
    Series OptiMOS5
    FET type 2N-Channel
    width 5mm
    Forward transconductance - minimum value 46S,90S
    Descent time 1.4ns,2.6ns
    rise time 4.7ns,4.3ns
    Typical shutdown delay time 4.3ns,8.8ns
    Typical connection delay time 4.3ns,5.6ns
    working temperature -55°C~150°C
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