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Power MOSFET BSC084P03NS3EGATMA1

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    MPN BSC084P03NS3E G
    Other # BSC084P03NS3EGATMA1
    Mfr. Infineon
    Oneyac # A-BSC084P03NS3E G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 78.6A
    Rds On(Max)@Id,Vgs 8.4mΩ
    Gate voltage Vgs 25V
    QG gate charge 43.4nC
    to configure SingleQuadDrainTripleSource
    Pd power dissipation (Max) 69W
    height 1.27mm
    length 5.9mm
    Series OptiMOSP3
    FET type P-Channel
    width 5.15mm
    Descent time 8.1nS
    rise time 133.5nS
    Typical shutdown delay time 33.3nS
    working temperature -55°C~150°C
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