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Power MOSFET BSC028N06LS3GATMA1 PG-TDSON-8-1

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    MPN BSC028N06LS3 G
    Other # BSC028N06LS3GATMA1
    Mfr. Infineon
    Oneyac # A-BSC028N06LS3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PG-TDSON-8-1 Series : OptiMOS™

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 100A
    Rds On(Max)@Id,Vgs 2.8mΩ@50A,10V
    Gate voltage Vgs ±20V
    QG gate charge 175nC
    to configure Single
    Pd power dissipation (Max) 139W
    height 1.27mm
    length 5.9mm
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 60S
    Descent time 19ns
    rise time 17ns
    Typical shutdown delay time 77ns
    working temperature -55°C~150°C
    Package/Enclosure PG-TDSON-8-1
    Series OptiMOS™
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