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Power MOSFET BSC018NE2LSATMA1

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    MPN BSC018NE2LS
    Other # BSC018NE2LSATMA1
    Mfr. Infineon
    Oneyac # A-BSC018NE2LS
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 25V
    Continuous drain current Id 100A
    Rds On(Max)@Id,Vgs 1.8mΩ
    Gate voltage Vgs 20V
    QG gate charge 19nC
    to configure SingleQuadDrain
    Pd power dissipation (Max) 69W
    height 1.27mm
    length 5.9mm
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 140S
    Descent time 3.6ns
    rise time 4.4ns
    Typical shutdown delay time 26ns
    Typical connection delay time 5.5ns
    working temperature -55°C~150°C
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