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Power MOSFET 

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    MPN AUIRGSL30B60K
    Mfr. Infineon
    Oneyac # A-AUIRGSL30B60K
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    IGBT type NPT
    Voltage emitter breakdown (maximum value) 600V
    Current collector (Ic) (maximum value) 78A
    Pulse current collector (Icm) 120A
    Vce (on) at different Vge and Ic 2.35V @ 15V,30A
    Switching energy 350 µ J (on), 825 µ J (off)
    Input type standard
    Td (on/off) value at 25 ° C 46ns/185ns
    Test conditions 400V, 30A, 10 ohms, 15V
    working temperature -55°C~175°C(TJ)
    Maximum continuous collector current 78 A
    Maximum collector emitter voltage 600 V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 370W
    FET type N-Channel
    pin number 3
    Switching speed 30kHz
    Transistor configuration single
    length 10.67mm
    width 4.83mm
    height 11.3mm
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