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Power MOSFET IPW60R099C6FKSA1

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    MPN IPW60R099C6
    Other # IPW60R099C6FKSA1
    Mfr. Infineon
    Oneyac # A-IPW60R099C6
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 2660pF @ 100V
    working temperature -55°C~150°C(TJ)
    Drain source voltage Vds 600V
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 3.5V @ 1.21mA
    Gate charge (Qg) at different Vgs (maximum value) 119nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 37.9A
    Rds On(Max)@Id,Vgs 90mΩ
    Gate voltage Vgs 20V
    QG gate charge 119nC
    to configure Single
    Pd power dissipation (Max) 278W
    height 21.1mm
    length 16.13mm
    Series CoolMOSC6
    FET type N-Channel
    width 5.21mm
    Descent time 6ns
    rise time 12ns
    Typical shutdown delay time 75ns
    Typical connection delay time 15ns
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